ELECTROMAGNETIC MODELING OF GaN FBAR STRUCTURES
D. NECULOIU, G. KONSTANTINIDIS, K. MUTAMBA, A. TAKACS, D. VASILACHE, C. SYDLO, T. KOSTOPOULOS, A. STAVRINIDIS, A. MÜLLER

Abstract. The paper presents a new electromagnetic modeling approach for FBAR structures that integrates the piezoelectric/acoustic effects into a commercial EM simulator. The Lorentz dispersion model describes the piezoelectric material frequency dependent effective permittivity. Several GaN based test structures were fabricated using bulk micromachining technologies. From microwave measurements the model parameters were extracted.