AlSi-BASED RF MEMS DEVICES WITH INTRINSIC MOS DETECTION
N. ABELÉ, M. FERNANDEZ-BOLAÑOS, R. FRITSCHI, F. CASSET, P. ANCEY, A.M. IONESCU

Abstract. In surface micromachining technology, the nature of thin film material for structural layer determines the device behavior and performances. Doped poly- or monocrystalline silicon MEMSbased devices are used extensively due to their mechanical characteristics. For MEMS resonators, the advantage of using metallic compounds comes from the non-ideal and low-doping repartition in doped silicon for electrostatic actuation. Electrical, mechanical and fabrication impacts of the AlSi alloy for MEMS application are investigated. Static measurements were done on a low-k fabricated structure and showed very good mechanical behavior under gate voltage actuation.