SWITCHING MICROWAVES USING MOTT MATERIALS
A. CISMARU, M. DRAGOMAN, H. HARTNAGEL

Abstract. This paper presents a new approach regarding the switching at high frequencies suitable for reconfiguration of microwave circuits using Mott materials. The Mott materials experience a reversible semiconductor-metal transition when an external parameter (temperature, dc bias, hydrogenation etc.) is varied. This transition can be used to allow or to stop the propagation of high frequency fields, if a thin film of a Mott material is integrated with a planar microwave waveguide.