NEW H-SHAPE RF MICROSWITCH DESIGN FOR MICROWAVE AND MILLIMETER-WAVE APPLICATIONS
M. FRYZIEL, A. BOE, C. VANOVERSCHELDE, N. ROLLAND, P. MULLER, L. BUCHAILLOT, P.-A. ROLLAND

Introduction
Modern communications require high data rates. To attain such rates, we can use complex modulations or channel equalization. With such a solution, the conception of systems is more difficult and need specific components. The consumption and prizes are then increased what is not compatible with mobile objects for the general public. We can also use quite simple modulations with large bandwidth, which leads to increase working frequencies. Then the most important issue is the conception of the RF parts to become an intelligent RF front-end [1].
To achieve the performances needed, the use of electronically steered arrays is more and more necessary. Phase shifters are critical components in such arrays and can easily limit the performances of the RF front-end introducing losses. To reduce these losses, RF microelectomechanical systems (MEMS) switches can replace the traditional GaAs transistors or PIN diodes. Moreover, MEMS switches dramatically decrease the power consumption of the system [2].
This paper presents a new structure for low-loss MEMS switch with relatively low actuation voltage. Our works are focused on the development of a low-temperature process. This allows integrate to the MEMS switches and MMIC on the same substrate and develop a system-on-chip to reduce cost and enhance performances of the RF front-end. The aimed frequencies for our applications are K-band (satellite communications) and V-band (wireless networks). As metallic contact switches have relatively poor performances in the millimetre range, we have developed two capacitive switches on GaAs, one shunt and one series.