RF MEMS Dielectric Charging Effect Estimation Due to High Energy Electrons Irradiation

V.G. THEONAS¹, G.J. PAPAIOANNOU¹, G. KONSTANTINIDIS<sup>2

1</sup>University of Athens, Physics Department, Panepistimiopolis Zografos, 15784 Athens,
Greece, Phone: +302107276722
²FORTH, Institute of Electronic Structure & Laser, Vassilika Vouton, 71110 Heraklion
Crete, Greece, Phone: +302810394142

Abstract. MEMS based switches and actuators have emerged as a serious alternative to GaAs or Si based solid state devices, especially in microwave applications. SiO2, Si3N4, Al2O3 and other insulating films are used in MEMS technology. However, their tendency for electrostatic charging diminishes the device reliability. The charging effect becomes significant when these devices are subjected to ionizing radiation, especially when utilized in aero-space applications. The irradiation induced charging depends on the nature of irradiation, the vicinal metal layers and the metal-insulator interface properties. RF MEMS capacitive switch dielectric sensitivity to 0.1 MeV – 10 MeV electrons is presented, taking into account the simulation of total energy deposition by primary electrons and secondary photons and electrons generated within the device, in a M.I.M structure with different insulating layer composition and thicknesses.