Investigation of Charging Processes in Dielectrics for RF-MEMS Capacitive Switches

E. PAPANDREOU¹, G. PAPAIOANNOU¹, F. GIACOMOZZI², M. KOUTSOURELI¹, B. MARGESIN², S. COLPO<sup>2

1</sup>University of Athens, Solid State Physics Section, Panepistimiopolis Zografos, Athens, Greece, Phone: +307276817
²Fondazione Bruno Kessler (FBK-irst), Via Sommarive 18, 38050 Povo Trento, Italy, Phone: +390461314432

Abstract. The charging processes have been investigated in dielectrics used in RF MEMS capacitive switches. The investigation included various silicon oxides and nitrides. Finally, the effect of substrate, bottom electrode, has been taken into account.