In-Plane RF MEMS Resonator Simulation

F. CASSET¹, C. WELHAM², C. DURAND^{1, 3, 4}, E. OLLIER¹, J.F. CARPENTIER⁴, P. ANCEY⁴, M. AÏD<sup>1

1</sup>CEA-LETI MINATEC, 17 rue des Martyrs, 38054 Grenoble, France, Phone: +33476927016
²Coventor, 3 Av. Du Québec, ZI Courtaboeuf, Villebon-Sur-Yvette, France
³IEMN CNRS UMR 8520, Cité Scientifique, Av. Poincaré, 59652 Villeneuve d’Asq, France
⁴STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France

Abstract. This paper presents an electromechanical system model of a MEMS flexural beam resonator constructed with a new side-electrode component. Simulated results and RF transmission measurements are in good agreement for a 95MHz Silicon-on-Nothing resonator. With the system model, we can predict the MEMS resonator behavior together with pure electrical components, thus enabling the design of a MEMS based oscillator for industrial perspectives.