DIELECTRIC MATERIAL CHARGING AND ESD STRESS OF ALN-BASED CAPACITIVE RF MEMS
J. RUAN, N. NOLHIER, M. BAFLEUR, L. BARY,N. MAURAN, F. COCCETTI, T. LISEC, R. PLANA

Abstract. Dielectric characterization of AlN based microwave capacitive switches has been performed. A figure-of-merit (FOM) has been drawn up to show an overview of dielectric material charging in capacitive RF MEMS with respect to its ability to trap charges under an electrical stress. Electrostatic Discharge (ESD) experiments have been carried out using a Transmission Line Pulse (TLP) technique. Electric tests show a drift of the threshold pull-down and pull-up voltages, associated to a dielectric charging process. ESD stresses create some electric arcs in both configurations membrane’s up-state and down-state and the related degradation is impacting the dielectric properties and then the microwave isolation.