EPITAXIAL ALN THIN FILMS FOR RF APPLICATIONS
J.C. MORENO, F. SEMOND, E. FRAYSSINET, J. MASSIES, R. VELARD, X. GAGNARD

Abstract. In this paper, we propose to use epitaxial aluminium nitride (AlN) thin films grown by molecular beam epitaxy (MBE) to make advanced high frequencies bulk acoustic wave (BAW) devices for filtering and time reference (oscillators) applications. We studied the material properties by performing both surface and structural characterizations.