DESIGN AND CHARACTERIZATION OF A BULK-ACOUSTIC-RESONATOR (FBAR)
H. CAMPANELLA, A. URANGA, P. NOUET, N. BARNIOL, L. TERÉS, J. ESTEVE

Abstract. The design and fabrication of radiofrequency (RF) thin-film bulk acoustic wave resonators (FBAR) for the 2 GHz-band is presented. FBAR process design and fabrication, scattering-parameter experimental characterization, and on-the-wafer extraction of the equivalent-circuit-parameters of FBAR has been performed. Resonators with quality factors over 700 and low motional-impedances have been obtained. Application of RF-FBAR to the design of a 2.4 GHz CMOS oscillator is proposed.