CO-INTEGRATION OF HIGHLY TUNABLE MEMS CAPACITOR AND HIGH QUALITY FACTOR AlSi INDUCTORS
A. MEHDAOUI, C. FILLIT, D. TSAMADOS, R.Y. FILLIT, C. BILLARD, P. ANCEY, A.M. IONESCU

Abstract. This work reports on the co-integration of highly-tunable MEMS capacitors with high quality inductors made with a low-temperature process (above-IC compatible) using polyimide as sacrificial layer, 4µm AlSi as metal layer for all MEMS devices and highresistivity silicon substrates. 110% capacitance tuning range and quality factors up to 15 are demonstrated at 2GHz. Basic LC blocks are realized and characterized.
Index Terms: highly tunable MEMS capacitors, high quality factor, above IC,MEMS devices, LC blocks.