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FABRICATION APPROACH FOR PASSIVE RF-ELEMENTS ON THE TOP OF
COMPLETE MANUFACTURED SEMICONDUCTOR WAFERS Abstract. A novel approach for fabrication of passive RF-elements on the top of passivated semiconductor microchips with open bond pads after BEOL is described. The post-process step is independent from the technology used to manufacture the semiconductor device. It is applicable for semiconductor devices fabricated in a standard CMOS-process in the same way as for SiGe-process fabricated devices. |